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| Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 0.7 q 21.00.5 15.00.2 High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C) Ratings 900 900 900 800 900 7 2 1 0.3 40 3 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 11.00.2 5.00.2 3.2 3.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage 2SC4960 2SC4960A VCBO VCES VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg Symbol 16.20.5 12.5 3.5 Solder Dip 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 Collector to emitter voltage Collector to 2SC4960 emitter voltage 2SC4960A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SC4960 2SC4960A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.5A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = - 0.08A, VCC = 250V 4 1 3 1 800 900 6 3 1.5 1 V V MHz s s s min typ max 50 50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 1 Power Transistors PC -- Ta 50 1.2 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.0W) TC=25C IB=200mA 1.0 2SC4960, 2SC4960A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 3 IC/IB=5 VCE(sat) -- IC TC=100C 25C 1 Collector power dissipation PC (W) Collector current IC (A) 40 (1) 0.8 30 0.6 20 (2) 10 (3) 0 0 20 40 60 80 100 120 140 160 0.4 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 0.3 -25C 0.1 0.2 10mA 0 0 2 4 6 8 10 12 0.03 0.01 0.01 0.03 0.1 0.3 1 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) 3 25C 1 TC=-25C 100C 0.3 IC/IB=5 100 hFE -- IC 1000 VCE=5V fT -- IC VCE=10V f=1MHz TC=25C Forward current transfer ratio hFE 30 25C TC=100C Transition frequency fT (MHz) 0.3 1 3 300 100 30 10 3 1 0.3 0.1 0.001 0.003 10 -25C 3 0.1 1 0.03 0.3 0.01 0.01 0.03 0.1 0.3 1 0.1 0.01 0.03 0.1 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=250V TC=25C Area of safe operation (ASO) 10 Non repetitive pulse TC=25C 3 Switching time ton,tstg,tf (s) 10 3 1 0.3 0.1 0.03 0.01 0 0.2 0.4 Collector current IC (A) ICP IC t=1ms 1 tstg 10ms 0.3 DC ton tf 0.1 2SC4960 2SC4960A 0.03 0.01 0.6 0.8 1.0 1 3 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 4.0 3.5 Lcoil=100H IC/IB=5 (IB1=-IB2) TC=25C 2SC4960, 2SC4960A Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 200 400 600 800 1000 1200 1400 1600 ICP -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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